Preliminary Technical Information
IXDI514 / IXDN514
14 Ampere Low-Side Ultrafast MOSFET Drivers
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up Protected over entire Operating Range
? High Peak Output Current: 14A Peak
? Wide Operating Range: 4.5V to 30V
? - 55°C to +125°C Extended Operating
Temperature
? High Capacitive Load
Drive Capability: 15nF in <30ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
? Two Drivers in Single Chip
Applications
? Driving MOSFETs and IGBTs
? Motor Controls
? Line Drivers
? Pulse Generators
General Description
The IXDI514 and IXDN514 are high speed high current gate
drivers specifically designed to drive the largest IXYS
MOSFETs & IGBTs to their minimum switching time and
maximum parctical frequency limits. The IXDI514 and
IXDN514 can source and sink 14 Amps of Peak Current
while producing voltage rise and fall times of less than
30ns. The inputs of the Drivers are compatible with TTL or
CMOS and are virtually immune to latch up over the entire
operating range! Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by very
quick & matched rise and fall times.
The IXDI514 is configured as a Inverting Gate Driver, and the
IXDN514 is configured as a Non-Inverting Gate Driver.
The IXDI514 and IXDN514 are each available in the 8-Pin P-
DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
6-Lead DFN (D1) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
?
?
?
?
?
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
?
Power Charge Pumps
Ordering Information
*United States Patent 6,917,227
Part Number
Description
Package
Packing Style
Pack
Configuration
Type
Qty
IXDI514PI
14A Low Side Gate Driver I.C.
8-Pin PDIP
Tube
50
IXDI514SIA
IXDI514SIAT/R
IXDI514D1
IXDI514D1T/R
IXDN514PI
IXDN514SIA
IXDN514SIAT/R
IXDN514D1
IXDN514D1T/R
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
14A Low Side Gate Driver I.C.
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
94
2500
56
2500
50
94
2500
56
2500
Inverting
Non-Inverting
NOTE: All parts are lead-free and RoHS Compliant
Copyright ? 2006 IXYS CORPORATION All rights reserved
First Release
DS99672(01/07)
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相关代理商/技术参数
IXDN514SIATR 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers
IXDN55N120 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT with optional Diode
IXDN55N120AU1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 85A I(C) | SOT-227B
IXDN55N120D1 功能描述:IGBT 晶体管 55 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXDN602D2TR 功能描述:IC GATE DVR 2A DUAL HS 8DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IXDN602PI 功能描述:MOSFET N-CH 2A DUAL LO SIDE 8-DI RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:高端和低端,独立 输入类型:非反相 延迟时间:160ns 电流 - 峰:290mA 配置数:1 输出数:2 高端电压 - 最大(自引导启动):600V 电源电压:10 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1381 (CN2011-ZH PDF)
IXDN602SI 功能描述:MOSFET N-CH 2A DUAL LO SIDE 8-SO RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:半桥 输入类型:PWM 延迟时间:25ns 电流 - 峰:1.6A 配置数:1 输出数:2 高端电压 - 最大(自引导启动):118V 电源电压:9 V ~ 14 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1282 (CN2011-ZH PDF) 其它名称:*LM5104M*LM5104M/NOPBLM5104M
IXDN602SIA 功能描述:DUAL LOW SIDE MOSFET DRIVER RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:高端和低端,独立 输入类型:非反相 延迟时间:160ns 电流 - 峰:290mA 配置数:1 输出数:2 高端电压 - 最大(自引导启动):600V 电源电压:10 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1381 (CN2011-ZH PDF)